Observation of Reliability of HfZrOX Gate Dielectric Devices with Different Zr/Hf Ratios

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概要

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• The impact of the Zr/Hf ratio on the reliability of a HfZrOX gate dielectric has been investigated in detail. By a frequency-varied charge-pumping method, we found that the density of bulk traps is reduced with increasing Zr content. Also, a comparable $D_{\text{it}}$ value observed by the rising/falling time-varied charge-pumping method suggests that Zr incorporation does not degrade the interface quality. Consequently, mobility increases with increasing Zr content in the HfZrOX dielectric and ${\sim}25$% mobility enhancement compared with that of HfO2 can be observed. However, the bulk trap density reduction reaches saturation at a higher Zr content. The improvement in positive-bias temperature instability (PBTI) was also demonstrated by both DC and pulse techniques. The smaller $V_{\text{th}}$ shift in PBTI is attributed to the reduction of fast trapping and the generation of slow traps. Finally, a reduced gate-induced drain leakage current (GIDL) was also observed with increasing Zr content because of the reduction of trap-assisted tunneling in a high-$k$ film.

• 2008-04-25

著者

• Fang Yean-kuen

  Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.

• Lee Tzu

  Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.

• Liao Jing-Chyi

  VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, R.O.C.

• Hou Yong

  Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.

• Tseng Wei

  Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.

• Yang Chih

  Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.

• Hsu Peng

  Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.

• Chao Yuen

  Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.

• Lin Kang

  Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.

• Huang Kuo

  Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.

• Liang Meng

  Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.

• Fang Yean-Kuen

  VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, R.O.C.

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