β-SiC Photodiodes Prepared on Silicon Substrates by Rapid Thermal Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• β-SiC photodiodes were fabricated on Si substrates by rapid thermal chemical vapor deposition (RTCVD). Experimental results show that the developed photodiodes have a peak photoresponsivity at 575 nm which corresponds to the visible light between yellow and green. These photodiodes display a low dark current of about 10 nA and 5 µ A at reverse biases of 1 V and 10 V, respectively, and have an optical gain of about 97 under an incident light power of 5 µ W and a reverse bias of 14.5 V. Dark-current levels versus reverse bias have also been measured as a function of temperature, and the results indicate that these diodes can operate at elevated temperatures above 200° C. Thus β-SiC is a candidate for optoelectronic devices on Si substrates in applications, where low cost, silicon compatibility, and high-temperature operation are the prime considerations.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-08-15

著者

• Fang Yean-kuen

  Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.

• Wu Kuen-hsien

  Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kung University

• Zhou Jing-hong

  Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kung University

• Ho Jyh-jier

  Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kung University

• Zhou Jing-Hong

  VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University,

• Wu Kuen-Hsien

  VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University,

• Fang Yean-Kuen

  VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University,

• Ho Jyh-Jier

  VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University,

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