Effects of Hot Carriers on DC and RF Performances of Deep Submicron p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Various Oxide Layer Thicknesses

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In this work, the effects of hot carriers on the DC and RF performances of 45 nm p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) with various oxide layer thicknesses were investigated in detail by RF automatic measurements. It was found that a PMOSFET with a thinner oxide layer suffers more serious damage from hot carriers than that with a thicker oxide layer. Also, the greatest degradation occurs at the bias condition when gate stress voltage $V_{\text{gstr}}$ is equal to drain stress voltage $V_{\text{dstr}}$, and it was found that the degradation of the cutoff frequency $ f_{\text{T}}$ is dependent on transconductance $g_{\text{m}}$ only. This is different from conventional long-channel devices, in which the greatest degradation takes place at $V_{\text{gstr}} = V_{\text{dstr}}/2$ and when $ f_{\text{T}}$ is dependent on both $g_{\text{m}}$ and the total gate capacitance $C_{\text{gg}}$ ($=C_{\text{gs}}+C_{\text{gd}}$).
2008-04-25