Effect of STI Stress Enhanced Boron Diffusion on Leakage and Vcc min of Sub-65nm node Low-Power SRAM
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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FANG Yean-Kuen
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, Nat
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Fang Yean-kuen
Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.
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Kuo Chien-li
United Microelectronics Corporation Central R&d Division
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Kuo Chien-li
United Microelectronics Corporation (umc) Central R&d Division
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Lin Tony
Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.
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CHENG Osbert
United Microelectronics Corp. (UMC), CRD Logic Division
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LEE Tung-Hsing
VLSI technology Lab., Institute of Microelectronics, EE Department, National Cheng Kung University,
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HSU Elrick
United Microelectronics Corporation, Central R&D Division
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SHENG Tzermin
United Microelectronics Corporation, Central R&D Division
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CHIEN S
United Microelectronics Corporation, Central R&D Division
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Hsu Elrick
United Microelectronics Corporation Central R&d Division
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Sheng Tzermin
United Microelectronics Corporation Central R&d Division
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Lee Tung-hsing
Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.
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Cheng Osbert
United Microelectronics Corporation Central R&d Division
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Cheng Osbert
United Microelectronics Corp. (umc) Crd Logic Division
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