New Negative-Bias-Temperature-Instability Improvement Using Buffer Layer under Highly Compressive Contact Etch Stop Layer for 45-nm-Node Complementary Metal–Oxide–Semiconductor and Beyond
スポンサーリンク
概要
- 論文の詳細を見る
A remarkable 50% drive current enhancement for p-type metal–oxide–semiconductor field-effect-transistors (pMOSFETs) using a highly compressive SiN contact etch stop layer (CESL) has been successfully demonstrated. In this study, we also first proposed that applying a modulated buffer layer prior to the highly compressive CESL could significantly improving negative-bias-temperature-instability (NBTI) and time-dependent-dielectric-breakdown (TDDB) degradation of pMOSFETs using compressive CESL. Without adversely impact the significant drive current enhancement of pMOSFETs, this thin modulated buffer layer can improve the NBTI lifetime of core pMOSFETs by over two orders of magnitude. Instead of the complex and high-costly SiGe refill scheme, this highly compressive CESL layer with a thin modulated buffer layer successfully demonstrates a better candidate for pMOSFETs drive current enhancement of 45-nm-node CMOS and beyond.
- 2007-04-30
著者
-
Cheng Osbert
United Microelectronics Corp. (umc) Crd Logic Division
-
Huang Cheng-tung
United Microelectronics Corp. Specialty Technology Department Technogoly & Process Development D
-
Ting Shyh-Fann
United Microelectronics Corp. (UMC), CRD Logic Division, No. 18, Nanke 2nd Rd., Tainan Science Park, Sinshih Township, Tainan County 741, Taiwan 12457, R.O.C.
-
Lee Kun-Hsien
United Microelectronics Corp. (UMC), CRD Logic Division, No. 18, Nanke 2nd Rd., Tainan Science Park, Sinshih Township, Tainan County 741, Taiwan 12457, R.O.C.
-
Jeng Li-Shian
United Microelectronics Corp. (UMC), CRD Logic Division, No. 18, Nanke 2nd Rd., Tainan Science Park, Sinshih Township, Tainan County 741, Taiwan 12457, R.O.C.
-
Hung Wen-Han
United Microelectronics Corp. (UMC), CRD Logic Division, No. 18, Nanke 2nd Rd., Tainan Science Park, Sinshih Township, Tainan County 741, Taiwan 12457, R.O.C.
-
Wu Meng-Yi
United Microelectronics Corp. (UMC), CRD Logic Division, No. 18, Nanke 2nd Rd., Tainan Science Park, Sinshih Township, Tainan County 741, Taiwan 12457, R.O.C.
-
Tseng Mei-Lun
United Microelectronics Corp. (UMC), CRD Logic Division, No. 18, Nanke 2nd Rd., Tainan Science Park, Sinshih Township, Tainan County 741, Taiwan 12457, R.O.C.
-
Liang Chia-Wen
United Microelectronics Corp. (UMC), CRD Logic Division, No. 18, Nanke 2nd Rd., Tainan Science Park, Sinshih Township, Tainan County 741, Taiwan 12457, R.O.C.
-
Huang Cheng-Tung
United Microelectronics Corp. (UMC), CRD Logic Division, No. 18, Nanke 2nd Rd., Tainan Science Park, Sinshih Township, Tainan County 741, Taiwan 12457, R.O.C.
関連論文
- NBTI Improvement under Highly Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS and Beyond
- 56% pMOSFETs Drive Current Enhancement from Optimized Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS
- Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- A Low Thermal Budget High Performance 0.25-0.18 μm Merged Logic Device and Dynamic Random Access Memory Application
- Effect of STI Stress Enhanced Boron Diffusion on Leakage and Vcc min of Sub-65nm node Low-Power SRAM
- New Negative-Bias-Temperature-Instability Improvement Using Buffer Layer under Highly Compressive Contact Etch Stop Layer for 45-nm-Node Complementary Metal–Oxide–Semiconductor and Beyond