Cheng Osbert | United Microelectronics Corp. (umc) Crd Logic Division

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著作論文

NBTI Improvement under Highly Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS and Beyond
56% pMOSFETs Drive Current Enhancement from Optimized Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS
Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
Effect of STI Stress Enhanced Boron Diffusion on Leakage and Vcc min of Sub-65nm node Low-Power SRAM
New Negative-Bias-Temperature-Instability Improvement Using Buffer Layer under Highly Compressive Contact Etch Stop Layer for 45-nm-Node Complementary Metal–Oxide–Semiconductor and Beyond

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