Novel Amorphous-Silicon-Based Double-Metal Antifuse with Barrier Enhancement Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-04-15
著者
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Lee K‐h
Taiwan Semiconductor Manufacturing Co. R&d
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Lee Kuo-hua
Taiwan Semiconductor Manufacturing Co. R&d
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HWANG Jun-Dar
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University
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Chen F‐y
National Cheng Kung Univ. Tainan Twn
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Hwang Jun-dar
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kung University
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Lee Kuen-hsien
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kung University
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Fang Yeau-kuen
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
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Chen Fu-Yuan
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University
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Chen Fu-yuan
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kung University
関連論文
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- Characteristics of Oxide Breakdown and Related Impact on Device of Ultrathin (2.2 nm) Silicon Dioxide
- Novel Chip Standby Current Prediction Model and Ultrathin Gate Oxide Scaling Limit(Semiconductors)
- The Growth and Characterization of Silicon/Silicon Carbide Heteroepitaxial Films on Silicon Substrates by Rapid Thermal Chemical Vapor Deposition
- The Impacts of Back-End High Temperature Thermal Treatments on the Characteristics and Gate Oxide Reliability of Thin Film Transistor in Ultra Large Scale Integrated Circuit Process
- Impact of Hydrogenating Plasma Induced Oxide Charging Effects on the Characteristics of Polysilicon Thin Film Transistors
- Epitaxial Growth and Electrical Characteristics of β-SiC on Si by Low-Pressure Rapid Thermal Chemical Vapor Deposition
- Novel Amorphous-Silicon-Based Double-Metal Antifuse with Barrier Enhancement Layer
- Amorphous Silicon Double-Injection Device with Gate-Controllable N-Type Negative Resistance
- A Novel Amorphous Silicon Doping Superlattice Device with a Controllable Gate
- High Current Density in Amorphous Silicon/Siliconcarbide Double-Barrier Resonant Tunneling Device on Aluminum/Silicon Substrate
- Novel Amorphous-Silicon-Based Light Converter
- Novel a-SiC/a-Si Heterojunction Filter with Twin-Wavelength Tunability
- Characteristics of Oxide Breakdown and Related Impact on Device of Ultrathin (2.2 nm) Silicon Dioxide
- Bi-Mode Breakdown Test Methodology of Ultrathin Oxide