The Impacts of Back-End High Temperature Thermal Treatments on the Characteristics and Gate Oxide Reliability of Thin Film Transistor in Ultra Large Scale Integrated Circuit Process
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-05-15
著者
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Fang Yean
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
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Cheng Chii
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
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Liang M
Taiwan Semiconductor Manufacturing Corp. Hsinchu Twn
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Liang Mong
Taiwan Semiconductor Manufacturing Corporaton
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Lee Kan
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
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HO Jia
Data Storage Institute
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Liang Mong
Taiwan Semiconductor Manufacturing Company
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Ho Jyh
Data Storage Institute
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Wuu Shou
Taiwan Semiconductor Manufacturing Company
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CHEN Chii
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University
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YAUNG Dung
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University
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WUU Kuen
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University
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HO Jyh
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University
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Wuu Kuen
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kung University
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Yaung Dung
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kung University
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Fang Yeau-kuen
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
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- The Impacts of Back-End High Temperature Thermal Treatments on the Characteristics and Gate Oxide Reliability of Thin Film Transistor in Ultra Large Scale Integrated Circuit Process
- Impact of Hydrogenating Plasma Induced Oxide Charging Effects on the Characteristics of Polysilicon Thin Film Transistors
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