Impact of Hydrogenating Plasma Induced Oxide Charging Effects on the Characteristics of Polysilicon Thin Film Transistors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-15
著者
-
Fang Yean
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
-
Cheng Chii
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
-
Liang M
Taiwan Semiconductor Manufacturing Corp. Hsinchu Twn
-
Liang Mong
Taiwan Semiconductor Manufacturing Corporaton
-
Lee Kan
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
-
Liang Mong
Taiwan Semiconductor Manufacturing Company
-
HUANG Kou
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kuang University
-
WUU Sou
Taiwan Semiconductor Manufacturing Company
-
Huang K
Chung Yuan Univ. Chung‐li Twn
-
Fang Yeau-kuen
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
関連論文
- Generalized Interconnect Delay Time and Crosstalk Models: II. Crosstalk-Induced Delay Time Deterioration and Worst Crosstalk Models : Semiconductors
- Generalized Interconnect Delay Time and Crosstalk Models: I. Applications of Interconnect Optimization Design : Semiconductors
- The Impacts of Back-End High Temperature Thermal Treatments on the Characteristics and Gate Oxide Reliability of Thin Film Transistor in Ultra Large Scale Integrated Circuit Process
- Impact of Hydrogenating Plasma Induced Oxide Charging Effects on the Characteristics of Polysilicon Thin Film Transistors
- Novel Amorphous-Silicon-Based Double-Metal Antifuse with Barrier Enhancement Layer
- Novel a-SiC/a-Si Heterojunction Filter with Twin-Wavelength Tunability