HSIEH Jang-Cheng | Taiwan Memory Technology Inc.
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概要
関連著者
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HSIEH Jang-Cheng
Taiwan Memory Technology Inc.
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Fang Yean-kuen
Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.
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Liang Mong-song
Taiwan Semiconductor Manufacturing Co. Ltd.
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FANG Yean-Kuen
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, Nat
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Fang Y‐k
National Cheng Kung Univ. Taina Twn
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Fang Yean-kuen
Vlsi Technology Laboratory Electrical Engineering National Cheng Kung University
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Fang Yean-kuen
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
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LIANG Mong-Song
Taiwan Semiconductor Manufacturing Co., Ltd.
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Liang Mong-song
R&d Department Taiwan Semiconductor Manufacturing Company
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CHEN Chii-Wen
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng-Kung University
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Lin M‐s
Taiwan Semiconductor Manufacturing Company
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Hsieh Jang-cheng
Taiwan Semiconductor Manufacturing Company Ltd. Science-based Industrial Park
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Chen C‐w
Industrial Technol. Res. Inst. Hsinchu Twn
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LEE Kan-Yuan
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kuang University
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LEE Kuei-Yi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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Fang Yean-kuen
Institute Of Microelectronics National Cheng Kung University
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Huang K‐c
National Chiao Tung Univ. Hsinchu Twn
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Huang Kuo-ching
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
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Lee K‐y
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
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Lee Ki-young
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
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YAUNG Dun-Nian
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kuang University
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LIN Mou-Shiung
Taiwan Semiconductor Manufacture Company
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Yaung Dun-nian
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
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LEE Gun-Yuan
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng-Kung University
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YOO Chue-San
Taiwan Semiconductor Manufacturing Co. Ltd.
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SHEU Yi-Ming
Taiwan Semiconductor Manufacturing Company
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Lee Gun-yuan
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng-kung University
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Hsieh Jang-Cheng
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan
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Cheng Chung-Yun
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1 University Road, Tainan 701, Taiwan
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Hsia Harry
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan
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Chen Wei-Ming
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan
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Lin Shyue-Shyh
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan
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Hou Chin-Shan
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan
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Sheu Yi-Ming
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan
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Fang Yean-Kuen
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1 University Road, Tainan 701, Taiwan
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Hsieh Jang-Cheng
Taiwan Memory Technology Inc., Hsinchu, Taiwan, Republic of China
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Liang Mong-Song
Taiwan Semiconductor Manufacturing Co. Ltd., Hsinchu, Taiwan, Republic of China
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Chen Chii-Wen
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng-Kung University,
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Lee Kan-Yuan
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng-Kung University,
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Fang Yean-Kuen
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng-Kung University,
著作論文
- Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric
- Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide
- Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology
- Narrow Width and Length Dependence of SiGe and Sallow-Trench-Isolation Stress Induced Defects in 45 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Strained SiGe Source/Drain
- Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric