Hsieh Jang-Cheng | Taiwan Memory Technology Inc., Hsinchu, Taiwan, Republic of China

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概要

関連著者

Fang Yean-kuen
Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.
Liang Mong-song
Taiwan Semiconductor Manufacturing Co. Ltd.
LEE Kan-Yuan
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kuang University
CHEN Chii-Wen
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng-Kung University
HSIEH Jang-Cheng
Taiwan Memory Technology Inc.
Hsieh Jang-Cheng
Taiwan Memory Technology Inc., Hsinchu, Taiwan, Republic of China
Liang Mong-Song
Taiwan Semiconductor Manufacturing Co. Ltd., Hsinchu, Taiwan, Republic of China
Chen Chii-Wen
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng-Kung University,
Lee Kan-Yuan
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng-Kung University,
Fang Yean-Kuen
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng-Kung University,

著作論文

Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric

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