SHEU Yi-Ming | Taiwan Semiconductor Manufacturing Company
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概要
関連著者
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SHEU Yi-Ming
Taiwan Semiconductor Manufacturing Company
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Fang Yean-kuen
Institute Of Microelectronics National Cheng Kung University
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CHEN Shih-Chang
Taiwan Semiconductor Manufacturing Company, Science-Based Industrial Park
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HSIEH Jang-Cheng
Taiwan Memory Technology Inc.
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Tao Han-jan
Taiwan Semiconductor Manufacturing Company
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Yang Fu-liang
Taiwan Semiconductor Manufacturing Company Exploratory Device Dept. Device Engineering Division Scie
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Yang Fu-liang
Taiwan Semiconductor Manufacturing Company
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Chen Shih-chang
Taiwan Semiconductor Manufacturing Company
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CHEN Hung-Ming
Taiwan Semiconductor Manufacturing Company
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HUANG Chien-Chao
Taiwan Semiconductor Manufacturing Company
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HWANG Jiunn-Ren
Taiwan Semiconductor Manufacturing Company
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CHANG Chang-Yun
Taiwan Semiconductor Manufacturing Company
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YANG Ming-Yi
Taiwan Semiconductor Manufacturing Company
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WEN Cheng-Kuo
Taiwan Semiconductor Manufacturing Company
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Hsieh Jang-Cheng
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan
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Cheng Chung-Yun
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1 University Road, Tainan 701, Taiwan
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Hsia Harry
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan
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Chen Wei-Ming
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan
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Lin Shyue-Shyh
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan
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Hou Chin-Shan
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan
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Sheu Yi-Ming
Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan
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Fang Yean-Kuen
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1 University Road, Tainan 701, Taiwan
著作論文
- Strain Efficiency Enhancement with Stress Intermedium Engineering (SIE) for Sub-65nm CMOS Scaling
- Narrow Width and Length Dependence of SiGe and Sallow-Trench-Isolation Stress Induced Defects in 45 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Strained SiGe Source/Drain