Monte-Carlo Sphere Model for "Effective Oxide Thinning" Induced Extrinsic Breakdown
スポンサーリンク
概要
- 論文の詳細を見る
- 1999-09-20
著者
-
Liang M‐s
Taiwan Semiconductor Manufacturing Co. Hsinchu Twn
-
Liang Mong-song
Taiwan Semiconductor Manufacturing Company
-
Liang Mong-song
R&d Department Taiwan Semiconductor Manufacturing Company
-
Su Chi-wen
R&d Department Taiwan Semiconductor Manufacturing Company
-
LIANG Mong-Song
R&D Department, Taiwan Semiconductor Manufacturing Company, Science-Based Industrial Park
-
Chen Jyh-huei
R&d Department Taiwan Semiconductor Manufacturing Company
-
Lin M‐s
Taiwan Semiconductor Manufacturing Company
-
Hou Chin-shan
Institute Of Optical Sciences National Central University
-
HUANG Huan-Tsung
Department of Electronics Engineering, National Chiao-Tung University
-
CHEN Ming-Jer
Department of Electronics Engineering, National Chiao-Tung University
-
SU Chi-Wen
R&D Department, Taiwan Semiconductor Manufacturing Company
-
HOU Chin-Shan
R&D Department, Taiwan Semiconductor Manufacturing Company
-
CHEN Jyh-Huei
Department of Electronics Engineering, National Chiao-Tung University
-
Huang Huan-tsung
Department Of Electronics Engineering National Chiao-tung University
-
Chen Ming-jer
Department Of Electronics Engineering National Chiao-tung University
関連論文
- Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
- Threshold Voltage Instability in nMOSFETs with HfSiO/SiO_2 High-k Gate Stacks
- Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC : N : H Films
- Effects of O_2- and N_2-Plasma Treatments on Copper Surface
- Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiC : H Films from Trimethylsilane and Tetramethylsilane
- Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
- Gallium Nitride Diffractive Microlenses Using in Ultraviolet Micro-Optics System
- A Comparison of Behaviors between Hydrogenated/Unhydrogenated Polysilicon Thin Film Transistors under Electric Stress
- Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric
- Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiCN:H Films with Different Hydrogen Contents
- Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure
- Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide
- Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology
- A Unified Functional Reliability Model for N-channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub 2 nm Gate Oxide
- New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides
- Monte Carlo Sphere Model for Effective Oxide Thinning Induced Extrinsic Breakdown
- Monte-Carlo Sphere Model for "Effective Oxide Thinning" Induced Extrinsic Breakdown
- A Novel Approach for Quantifying Contamination in Multiply Charged Implantation
- Anomalous Behaviors of Random Telegraph Signals in Ultra-thin Gate Oxide MOSFETs
- A Novel Sphere-Based Statistical Model for "Local Oxide Thinning" Induced Gate Oxide Breakdown
- Reproducing Subthreshold Characteristics of Metal–Oxide–Semiconductor Field Effect Transistors under Shallow Trench Isolation Mechanical Stress Using a Stress-Dependent Diffusion Model