A Novel Sphere-Based Statistical Model for "Local Oxide Thinning" Induced Gate Oxide Breakdown

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概要

• 論文の詳細を見る
• 2000-08-28

著者

• HUANG Huan-Tsung

  Department of Electronics Engineering, National Chiao-Tung University

• Huang Huan-tsung

  Department Of Electronics Engineering National Chiao-tung University

• Chen Ming-jer

  Department Of Electronics Engineering National Chiao-tung University

関連論文

• Monte Carlo Sphere Model for Effective Oxide Thinning Induced Extrinsic Breakdown
• Monte-Carlo Sphere Model for "Effective Oxide Thinning" Induced Extrinsic Breakdown
• Anomalous Behaviors of Random Telegraph Signals in Ultra-thin Gate Oxide MOSFETs
• A Novel Sphere-Based Statistical Model for "Local Oxide Thinning" Induced Gate Oxide Breakdown
• Reproducing Subthreshold Characteristics of Metal–Oxide–Semiconductor Field Effect Transistors under Shallow Trench Isolation Mechanical Stress Using a Stress-Dependent Diffusion Model

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