Reproducing Subthreshold Characteristics of Metal–Oxide–Semiconductor Field Effect Transistors under Shallow Trench Isolation Mechanical Stress Using a Stress-Dependent Diffusion Model

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概要

• 論文の詳細を見る

• N-channel metal–oxide–semiconductor field effect transistors (MOSFETs) with a lightly doped well exhibit subthreshold current versus voltage ($I$–$V$) characteristics that are sensitive to shallow trench isolation (STI) mechanical stress. Such striking dependencies offer the opportunity to validate a proposed two-dimensional (2D) process model that relates the impurity diffusion to the mechanical stress throughout the substrate. With the assistance of sophisticated process/device simulations, the model appears to satisfactorily reproduce subthreshold $I$–$V$ characteristics for different active area lengths and different substrate biases. The stress-dependent point defect equilibrium concentration and diffusion model are also implemented to evaluate the stress effect on transient enhanced diffusion.

• 2006-08-25

著者

• Chen Ming-jer

  Department Of Electronics Engineering National Chiao-tung University

• Wang Chih-Chiang

  Device Engineering Division, Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Sixth Road, Science-Based Industrial Park, Hsin-Chu 300, Taiwan, R.O.C.

• Sheu Yi-Ming

  Device Engineering Division, Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Sixth Road, Science-Based Industrial Park, Hsin-Chu 300, Taiwan, R.O.C.

• Yang Sheng-Jier

  Logic Technology Division, Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Sixth Road, Science-Based Industrial Park, Hsin-Chu 300, Taiwan, R.O.C.

• Chang Chih-Sheng

  Logic Technology Division, Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Sixth Road, Science-Based Industrial Park, Hsin-Chu 300, Taiwan, R.O.C.

• Liu Sally

  Device Engineering Division, Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Sixth Road, Science-Based Industrial Park, Hsin-Chu 300, Taiwan, R.O.C.

• Diaz Carlos

  Logic Technology Division, Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Sixth Road, Science-Based Industrial Park, Hsin-Chu 300, Taiwan, R.O.C.

• Chen Ming-Jer

  Department of Electronics Engineering, National Chiao-Tung University, Hsin-Chu 300, Taiwan, R.O.C.

関連論文

• Monte Carlo Sphere Model for Effective Oxide Thinning Induced Extrinsic Breakdown
• Monte-Carlo Sphere Model for "Effective Oxide Thinning" Induced Extrinsic Breakdown
• Anomalous Behaviors of Random Telegraph Signals in Ultra-thin Gate Oxide MOSFETs
• A Novel Sphere-Based Statistical Model for "Local Oxide Thinning" Induced Gate Oxide Breakdown
• Reproducing Subthreshold Characteristics of Metal–Oxide–Semiconductor Field Effect Transistors under Shallow Trench Isolation Mechanical Stress Using a Stress-Dependent Diffusion Model

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