A Unified Functional Reliability Model for N-channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub 2 nm Gate Oxide
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-09-15
著者
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Hsu Charles
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Liang M‐s
Taiwan Semiconductor Manufacturing Co. Hsinchu Twn
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Hsu Charles
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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Lee Hai-ming
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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LIANG Mong-Song
Taiwan Semiconductor Manufacturing Co., Ltd.
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Liang Mong-song
Taiwan Semiconductor Manufacturing Company
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Liang Mong-song
Taiwan Semiconductor Manufacturing Co. Ltd.
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Hsu Charles
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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DU Long-Jye
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department
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KING Ya-Ching
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department
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Du Long-jye
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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King Ya-ching
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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HSU Charles
Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University
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