Liang M‐s | Taiwan Semiconductor Manufacturing Co. Hsinchu Twn

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著作論文

Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
Threshold Voltage Instability in nMOSFETs with HfSiO/SiO_2 High-k Gate Stacks
Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC : N : H Films
Effects of O_2- and N_2-Plasma Treatments on Copper Surface
Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiC : H Films from Trimethylsilane and Tetramethylsilane
Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiCN:H Films with Different Hydrogen Contents
Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure
A Unified Functional Reliability Model for N-channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub 2 nm Gate Oxide
New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides
Monte Carlo Sphere Model for Effective Oxide Thinning Induced Extrinsic Breakdown
Monte-Carlo Sphere Model for "Effective Oxide Thinning" Induced Extrinsic Breakdown

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