A New Bit-Line-Controlled Self-Convergent Multi-Level And-Type Flash Memory
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Hsu Charles
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Yang Evans
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Wong Wei-jer
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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Hsu Charles
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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CHOU Amy
Microelectronic Laboratory, Semiconductor Technology Application Research(STAR)Group, Department of
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Wong Web-jer
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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Chou Amy
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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Yang Evans
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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YANG Evans
Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University
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HSU Charles
Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University
関連論文
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- A New Bit-Line-Controlled Self-Convergent Multilevel AND-Type Flash Memory
- Comprehensive Study of a New Self-Convergent Programming Scheme for Split Gate Flash Memory
- A New Bit-Line-Controlled Self-Convergent Multi-Level And-Type Flash Memory
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- Degradation of Flash Memory Using Drain-Avalanche Hot Electron (DAHE) Self-Convergence Operation Scheme
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- New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides
- A Body-Effect-Assisted NOR-type (BeNOR) Multilevel Flash Memory
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