Degradation of Flash Memory Using Drain-Avalanche Hot Electron (DAHE) Self-Convergence Operation Scheme
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-07-01
著者
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Yang Evans
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Wong Wei-jer
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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LIANG Mong-Song
Taiwan Semiconductor Manufacturing Co., Ltd.
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Liang Mong-song
Taiwan Semiconductor Manufacturing Co. Ltd.
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Liang Mong-song
Taiwan Semiconductor Manufacturing Company Ltd.
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WANG Yen-Sen
Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of
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Wang Yen-sen
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Wong Web-jer
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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SHUN Shih-Jye
Microelectronics Lab. Semiconductor Technology & Application Research (STAR) Group, Department of El
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LIN Chrong-Jung
Taiwan Semiconductor Manufacturing Company, Ltd.
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HSU harles
Microelectronics Lab. Semiconductor Technology & Application Research (STAR) Group, Department of El
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Wang Y‐s
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Wang Yen-sen
Microelectronics Laboratory Semiconductor Technology & Application Research(star)group Departmen
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Hsu Harles
Microelectronics Lab. Semiconductor Technology & Application Research (star) Group Department Of
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Shun Shih-jye
Microelectronics Lab. Semiconductor Technology & Application Research (star) Group Department Of
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Lin Chrong-jung
Taiwan Semiconductor Manufacturing Company Ltd.
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Yang Evans
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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Yang Evans
Microelectronics Lab. Semiconductor Technology & Application Research (star) Group Department Of
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Shen Shin-Jye
Microelectronics Lab. Semiconductor Technology & Application Research (STAR) Group, Department of Electric Engineering, National Tsing-Hua University
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YANG Evans
Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University
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- Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
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- Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiCN:H Films with Different Hydrogen Contents
- New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides
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