A Novel Approach for Quantifying Contamination in Multiply Charged Implantation
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概要
- 論文の詳細を見る
A novel approach for quantifying impurity levels in doubly charged implantation is proposed and verified. It is proved to be quantitative in nature and easier to implement in a production environment than the existing Faraday cup and electrostatic methods. Application of this method is demonstrated in a phosphorous double-charged implantation. Quantitative analysis of the impurity level is also presented.
- 社団法人応用物理学会の論文
- 1992-04-15
著者
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Liang Mong-song
R&d Department Taiwan Semiconductor Manufacturing Company
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Lin M‐s
Taiwan Semiconductor Manufacturing Company
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Wang Jen-kwang
Opto-electronics & Systems Labs. Industrial Technology Research Institute
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Yoo Chue-san
R&D, Taiwan Semiconductor Manufacturing Co., Ltd.
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WU Chen-pao
R&D, Taiwan Semiconductor Manufacturing Co., Ltd.
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WANG Jen-kwang
R&D, Taiwan Semiconductor Manufacturing Co., Ltd.
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LIN Mou-shiun
R&D, Taiwan Semiconductor Manufacturing Co., Ltd.
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Yoo C‐s
Taiwan Semiconductor Manufacturing Co. Ltd. Hisnchu Twn
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Wu Chen-pao
R&d Taiwan Semiconductor Manufacturing Co. Ltd.
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- A Novel Approach for Quantifying Contamination in Multiply Charged Implantation