The Impact of Pad Test-Fixture for De-embedding on Radio-Frequency MOSFETs
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Lai Chieh-ming
Institute Of Microelectronics National Cheng Kung University
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Fang Yean-kuen
Institute Of Microelectronics National Cheng Kung University
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YEH Wen-Kuan
Department of Electrical Engineering, National University of Kaohsiung
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PAN Shing-Tai
Department of Computer Science Information Engineering, Shu-Te University
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HU Chia-Che
Department of Computer Science Information Engineering, Shu-Te University
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KU Chao-Ching
Institute of Microelectronics, National Cheng Kung University
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CHEN Shuo-Mao
Institute of Microelectronics, National Cheng Kung University
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FANG Yean-Kuan
Institute of Microelectronics, National Cheng Kung University
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CHAO J.
Taiwan Semiconductor Manufacturing Company
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Yeh Wen-kuan
Department Of Electrical Engineering National University Of Kaohsiung
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Hu Chia-che
Department Of Electrical Engineering National University Of Kaohsiung
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Chen Shuo-mao
Institute Of Microelectronics National Cheng Kung University
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Pan Shing-tai
Department Of Computer Science Information Engineering Shu-te University
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Pan Shing-tai
Department Of Computer Science And Information Engineering Shu-te University
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Ku Chao-ching
Institute Of Microelectronics National Cheng Kung University
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Hsu Chia-wei
Department Of Electrical Engineering National University Of Kaohsiung
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Hu Chia-che
Department Of Computer Science Information Engineering Shu-te University
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Fang Yean-kuan
Institute Of Microelectronics National Cheng Kung University
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- Systematic Analysis and Modeling of On-Chip Spiral Inductors for CMOS RFIC Application
- Mobility Modulation Technology Impact on Device Performance and Reliability for sub-90nm SOI CMOSFETs
- The Impact of Body-Potential on Hot-Carrier-Induced Device Degradation for 90nm Partially-Depleted SOI nMOSFETs
- Width Effect on Hot-Carrier-Induced Degradation for 90nm Partially Depleted SOI CMOSFETs
- Width Effect on Hot-Carrier-induced Degradation for 90nm Partially Depleted SOI CMOSFET
- The Impact of Pad Test-Fixture for De-embedding on Radio-Frequency MOSFETs
- Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures