Width Effect on Hot-Carrier-Induced Degradation for 90 nm Partially Depleted SOI CMOSFETs

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概要

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• The hot-carrier-induced degradation of partially depleted silicon-on-insulator complementary metal-oxide-semiconductor field-effect transistors (CMOSFETs) at various applied voltages was investigated using 90 nm body-contact silicon-on-insulator (BC-SOI) devices with 1.6 nm gate oxides and various gate widths. In this work, a small gate-width device with a large drain current density was observed to suffer from serious hot-carrier-induced degradation. By inspecting the gate current ($I_{\text{G}}$) degradation, the quality of gate oxide was observed to decay apparently after hot-carrier stressing. For a 90 nm BC-SOI nMOSFET of 1.2 μm narrow gate width, the tolerance of 1.6 nm ultra thin gate oxide layer was very low particularly around the channel edge region; thus, device reliability is very critical and easily degraded because of device gate oxide breakdown after hot-carrier stressing.

• 2005-04-15

著者

• Lai Chieh-ming

  Institute Of Microelectronics National Cheng Kung University

• Fang Yean-kuen

  Institute Of Microelectronics National Cheng Kung University

• Yeh Wen-kuan

  Department Of Electrical Engineering National University Of Kaohsiung

• Pan Shing-tai

  Department Of Computer Science And Information Engineering Shu-te University

• Lai Chieh-Ming

  Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan, Taiwan 70101, R.O.C.

• Pan Shing-Tai

  Department of Computer Science Information Engineering, Shu-Te University, Shu Te University No. 59, Hun Shang Rd, Hun Shang Village, Yen Chao, Kaohsiung 82442, Taiwan, R.O.C.

• Fang Yean-Kuen

  Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan, Taiwan 70101, R.O.C.

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