Modeling of Drain Bias Dependence on Threshold Voltage Shift Under Negative Gate Bias Stress of a-Si:H TFTs
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Tseng Huai-yuan
Flexible Electronics Technology Division / Electronics And Optoelectronics Research Laboratories (eo
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CHIANG Ko-Yu
Electronics and Optoelectronics Research Laboratories (EOL) Industrial Technology Research Institute
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KUNG Chen-Pang
Flexible Electronics Technology Division
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Chiang Ko-yu
Flexible Electronics Technology Division / Electronics And Optoelectronics Research Laboratories (eo
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Kung Chen-pang
Flexible Electronics Technology Division / Electronics And Optoelectronics Research Laboratories (eo
関連論文
- Modeling of Drain Bias Dependence on Threshold Voltage Shift Under Negative Gate Bias Stress of a-Si:H TFTs
- Layout Dependence on Threshold Voltage Instability of Hydrogenated Amorphous Silicon Thin Film Transistors