An MINPIM Structure Mixing Device

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概要

• 論文の詳細を見る

• A device of the MINPIM structure is proposed and demonstrated to work as a mixer. It employs two MIS junctions connected face-to face with a reversely biased P-N junction to form two MISS transistors in a series to perform mixing. The device was fabricated in a V grooved structure, and its mixed $I\text{--}V$ characteristics are presented.

• 1989-04-20

著者

• Lei Tan

  Institute And Department Of Electronics National Chiao Tung University

• Chang David

  Institute Of Electronics National Chiao Tung University

• Lee Chung

  Institute of Electronics, National Chiao Tung University, Hsin Chu, Taiwan, R.O.C

• Lei Tan

  Institute of Electronics, National Chiao Tung University, Hsin Chu, Taiwan, R.O.C

• Chang David

  Institute of Electronics, National Chiao Tung University, Hsin Chu, Taiwan, R.O.C

関連論文

• Improvement of Polysilicon Oxide Integrity Using NF_3-Annealing
• The Breakover Condition for the PNPN Structure
• A Switching Device of a PN Junction Structure with Two Layers of Thin Oxide
• An MINPIM Structure Mixing Device

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