A Switching Device of a PN Junction Structure with Two Layers of Thin Oxide

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概要

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• A switching device has been made using two layers of thin oxide. Two conjugate face-to-face MIS’s are used to replace the PN+ (or NP+) junctions. The electric $I$-$V$ characteristics of this MINPIM device measured in experiments are presented in this paper. The experiments show that over-voltage stress may cause the NP junction to avalanche and lead to switching. One or two switchings will occur depending on the oxide layers. The holding voltage is also related to the base width. Proper base biasing may enhance the energy band shift or the minority carrier injection ratio and reduce the breakover voltage or holding voltage, respectively.

• 1989-06-20

著者

• Lei Tan

  Institute And Department Of Electronics National Chiao Tung University

• Chang David

  Institute Of Electronics National Chiao Tung University

• Lee Chung

  Institute of Electronics, National Chiao Tung University, Hsin Chu, Taiwan, R.O.C

• Chang David

  Institute of Electronics, National Chiao Tung University, Hsin Chu, Taiwan, R.O.C.

• Lee Chung

  Institute of Electronics, National Chiao Tung University, Hsin Chu, Taiwan, R.O.C.

関連論文

• Improvement of Polysilicon Oxide Integrity Using NF_3-Annealing
• The Breakover Condition for the PNPN Structure
• A Switching Device of a PN Junction Structure with Two Layers of Thin Oxide
• An MINPIM Structure Mixing Device

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