Yang B | Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
スポンサーリンク
概要
関連著者
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Lee Chang
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kang Y
Hynix Semiconductor Kyoungki‐do Kor
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Kang N
Hynix Semiconductor Kyoungki‐do Kor
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Suh Chung
Ferroelectric Technology Department Hyundai Electronics Industries Co. Ltd.
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Hong Suk-Kyoung
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
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Baek Yong
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
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Yang B
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
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Kang Young
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
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Lee Chang
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
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Kang Nam
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
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Lee Chang
Memory Research And Development Division Hynix Semiconductor Inc.
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Kang Young
Ferroelectric Technology Department Hyundai Electronics Industries Co. Ltd.
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Hong Suk-kyoung
Feram Device Team Memory R&d Division Hynix Semiconductor
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Hong Suk-kyoung
Semiconductor Advanced Research Division Hyundai Electronics Industries Co. Ltd.
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Hong Suk
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
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Hong Soon-kil
Dong Il Technology Ltd.
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Hong S.-k.
Feram Device Team Memory R&d Division Hynix Semiconductor
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Baek Yong
Ferroelectric Technology Department Hyundai Electronics Industries Co. Ltd.
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Yang B
Feram Device Team Memory R&d Division Hynix Semiconductor
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Yang B.
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
著作論文
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories