Choi Sangmoo | SDL, Samsung Advanced Institute of Technology, Suwon 446-712, Korea
スポンサーリンク
概要
関連著者
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Kim Tae-wook
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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CHOI Hyejung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Lee Takhee
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Choi Hyejung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Choi Sangmoo
SDL, Samsung Advanced Institute of Technology, Suwon 446-712, Korea
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Lee Takhee
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Kim Tae-Wook
Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea
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Kim Tae-Wook
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Kim Tae-Wook
Department of Electronic Engineering, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
著作論文
- Nano-Scale Memory Characteristics of Silicon Nitride Charge Trapping Layer with Silicon Nanocrystals