Shot Noise Suppression in SiGe Resonant Interband Tunneling Diodes
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概要
- 論文の詳細を見る
We report experimental noise studies of SiGe resonant interband tunneling diodes (RITDs) to probe the tunneling transport properties. The shot noise measurements show the signatures of coherent transport not only in the positive differential resistance (PDR) region but also in the plateau-like region on the negative differential resistance (NDR) side of the current–voltage ($I$–$V$) trace. The experimentally extracted Fano factor $F < 0.5$ may suggest that the coherent transport gradually becomes obvious in the NDR region. The variation of the Fano factor through the resonance process is discussed according to the recent theoretical model of coherent tunneling.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-12-25
著者
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Lee Takhee
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Song Hyunwook
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Jeong Heejun
Department Of Applied Physics Hanyang University
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Kim Youngsang
Department of Applied Physics, Hanyang University, Ansan 426-791, Korea
-
Lee Takhee
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
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Song Hyunwook
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
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