Characterization of Defect States Responsible for Leakage Current in Tantalum Pentoxide Films for Very-High-Density Dynamic Random Access Memory (DRAM) Applications

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概要

• 論文の詳細を見る

• Defect states in tantalum pentoxide films grown by low-pressure metal-organic chemical vapor deposition on silicon wafers have been studied with Al/Ta_2O_5/p^+-Si and Al/Ta_2O_5/n^+-Si capacitor structures by the zero-bias thermally stimulated current technique. It was demonstrated that a shallow band of defect states is responsible for leakage current. The shallow band of defect states can be suppressed by low-temperature post metallization annealing, resulting in a reduction of leakage current for both positive gate bias and negative gate bias. However, the reduction in leakage current for positive gate bias is much stronger than that for negative gate bias.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Lau Wai

  Department Of Electrical Engineering National University Of Singapore

• Sandler Nathan

  Cvd Division Lam Research Corporation

• Tan Thiam

  Department Of Civil Engineering National University Of Singapore

• Tan Thiam

  Department Of Electrical Engineering National University Of Singapore

• Page Barry

  CVD Division, Lam Research Corporation

• Page Barry

  Cvd Division Lam Research Corporation

• Lau Wai

  Department of Electrical Engineering, National University of Singapore

関連論文

• Evidence that N_2O is a Stronger Oxidizing Agent than O_2 for the Post-Deposition Annealing of Ta_2O_5 on Si Capacitors
• A Comparison of Defect States in Tantalum Pentoxide (Ta_2O_5) Films after Rapid Thermal Annealing in O_2 or N_2O by Zero-Bias Thermally Stimulated Current Spectroscopy
• Strong Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors with Interfacial Oxide due to Fluctuations in Tunneling Probabilities
• The Superiority of N_2O Plasma Annealing over O_2 Plasma Annealing for Amorphous Tantalum Pentoxide (Ta_2O_5) Films
• Characterization of Defect States Responsible for Leakage Current in Tantalum Pentoxide Films for Very-High-Density Dynamic Random Access Memory (DRAM) Applications
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