The Characterization of Traps in Semi-Insulating Gallium Arsenide Buffer Layers Grown at Low Temperature by Molecular Beam Epitaxy with an Improved Zero-Bias Thermally Stimurated Current Technique

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-11-01

著者

• Tan Leng

  Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore

• CHONG Tow

  Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore

• LAU Wai

  Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore

• GOO Chuen

  Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore

• GOH Kian

  Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore

• Lau W

  Lam Res. Corp. California Usa

• Goh Kian

  Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore

• Goo C

  Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore

• Chong T

  National Univ. Singapore Singapore

• Chong Tow

  Data Storage Institute

• Lau Wai

  Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore

• Chong Tow

  Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore

• Chong Tow

  Data Storage Institute, DSI Building

関連論文

• Application of Semiconducting Low Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates
• The Characterization of Traps in Semi-Insulating Gallium Arsenide Buffer Layers Grown at Low Temperature by Molecular Beam Epitaxy with an Improved Zero-Bias Thermally Stimurated Current Technique
• On the Possibility of High Density Data Storage Based on Modulation-Doped Electron Trapping Materials
• Numerical Simulation of Backgating Suppression in High Electron Mobility Transistors (HEMTs) with a Low Temperature Molecular Beam Epitaxy (MBE)-Grown Gallium Arsenide Buffer Layer between the Substrate and Active Layers
• The Application of Semiconducting Low-Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates
• A Comparison of the Selective Etching Characteristics of Conventional and Low-Temperature-Grown GaAs over AlAs by Various Etching Solutions
• Rewritable Dual-Layer Initialization-Free Phase-Change Optical Disk
• Optical Transition of Chalcogenide Phase-Change Thin Films
• Evidence that N_2O is a Stronger Oxidizing Agent than O_2 for the Post-Deposition Annealing of Ta_2O_5 on Si Capacitors
• A Comparison of Defect States in Tantalum Pentoxide (Ta_2O_5) Films after Rapid Thermal Annealing in O_2 or N_2O by Zero-Bias Thermally Stimulated Current Spectroscopy
• A New Structure of Super-Resolution Near-Field Phase-Change Optical Disk with a Sb_2Te_3 Mask Layer
• Three-Dimensional Thermal Modelling and Analysis of Near-Field Phase Change Optical Disks
• Study of the Superlattice-Like Phase Change Optical Recording Disks
• Study of the Multi-Level Reflection Modulation Recording for Phase Change Optical Disks
• Thermal Modeling of Grooved Phase Change Optical Recording Disk
• Improved Crystalline Quality of Molecular Beam Epitaxy Grown GaAs-on-Si Epilayer through the Use of Low-Temperature GaAs Intermediate Layer
• Quantitative Detection of Oxygen Contamination Related Traps in Gallium Arsenide Epitaxial Layer Grown by Molecular Beam Epitaxy at Low Temperature
• The Development of a Highly Selective KI/I_2/H_2O/H_2SO_4 Etchant for the Selective Etching of Al_Ga_As over GaAs
• New Structure of Dual-Layer Rewritable Phase-Change Optical Disc
• Laser Diode Array Pumped Q-Switched Nd:YVO_4 Mini-Disc Laser with V-Folded Cavity
• Dynamic coercivity measurements on magnetic thin film media (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム〔英文〕)
• CoCrPt-X(X=C, SiO2) granular thin film media for high areal density recording (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム〔英文〕)
• DYNAMIC COERCIVITY MEASUREMENTS ON MAGNETIC THIN FILM MEDIA
• CoCrPt-X(X=C, SiO_2)granular thin film media for high areal density recording
• Fabrication and Characterization of Ion-Exchanged Optical Waveguides in Potassium Lithium Niobate Crystal Substrates(Optics and Quantum Electronics)
• Theoretical Analysis of Recording Light Distribution in Phase-Change Near-Field Recording Using Solid Immersion Lens
• Three-Dimensional Finite-Difference Time-Domain Analysis of Optical Disk Storage System
• Effect of Channel Coding in Digital Holographic Data Storage
• The Superiority of N_2O Plasma Annealing over O_2 Plasma Annealing for Amorphous Tantalum Pentoxide (Ta_2O_5) Films
• Elevated-Confined Phase-Change Random Access Memory Cells
• Plastic Deformation and Failure Analysis of Phase Change Random Access Memory
• Formation and Properties of Proton-exchanged Z-cut MgO:LiNbO_3 Crystal Waveguides
• Roles and Contributions of Surface Plasmons, Evanescent Modes and Propagation Modes for Near-Field Enhancement of Nano-Slit
• Multi-Dimensional Multi-Level Optical Pickup Head
• An Experimental Model of Sled System in an Optical Disk Drive
• Theoretical Analysis of Bound-to-Continuum State Infrared Absorption in GaAs/Al_xGa_As Quantum Well Structures
• Nanosecond AgGaS_2 Optical Parametric Oscillator with More Than 4 Micron Output
• Challenges and Opportunities in Magnetic Data Storage
• The Identification and Suppression of Defects Responsible for Electrical Hysteresis in Metal-Nitride-Silicon Capacitors
• Nanoscaling of Phase Change Memory Cells for High Speed Memory Applications
• Study of Recorded Mark Width Change with Laser Power in Heat-Assisted Magnetic Recording
• Role of Ge Switch in Phase Transition: Approach using Atomically Controlled GeTe/Sb2Te3 Superlattice
• Thermal Modeling of Grooved Phase Change Optical Recording Disk
• Theoretical Analysis of Recording Light Distribution in Phase-Change Near-Field Recording Using Solid Immersion Lens
• Optical Transition of Chalcogenide Phase-Change Thin Films
• One-Color Nonvolatile Holographic Recording in Ce:Tb:LiNbO3

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