Numerical Simulation of Backgating Suppression in High Electron Mobility Transistors (HEMTs) with a Low Temperature Molecular Beam Epitaxy (MBE)-Grown Gallium Arsenide Buffer Layer between the Substrate and Active Layers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-06-15
著者
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Tan Leng
Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore
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Tan L
National Univ. Singapore Shingapore Sgp
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LAU Wad
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore
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SAMUDRA Ganesh
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore
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LEE Kin
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore
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ANG Boon
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore
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Lau Wad
Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore
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Lee Kin
Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore
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Ang Boon
Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore
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Samudra Ganesh
Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore
関連論文
- Application of Semiconducting Low Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates
- The Characterization of Traps in Semi-Insulating Gallium Arsenide Buffer Layers Grown at Low Temperature by Molecular Beam Epitaxy with an Improved Zero-Bias Thermally Stimurated Current Technique
- Numerical Simulation of Backgating Suppression in High Electron Mobility Transistors (HEMTs) with a Low Temperature Molecular Beam Epitaxy (MBE)-Grown Gallium Arsenide Buffer Layer between the Substrate and Active Layers
- The Application of Semiconducting Low-Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates