Plastic Deformation and Failure Analysis of Phase Change Random Access Memory
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概要
- 論文の詳細を見る
Although lateral phase change random access memory (PCRAM) has attracted a lot of interest due to its simpler fabrication process and lower current compared to ovonic unified memory (OUM), it faces a problem of poor lifetime. This paper studied relation between plastic deformation and the failure of PCRAM through both experiment and simulation. OUM and lateral PCRAM incorporating Ge2Sb2Te5 were fabricated and tested. The overwriting test showed that lifetime of OUM exceeded $10^{6}$ while that of lateral PCRAM was only about 100. Using atomic force microscopy (AFM), it was found that the plastic deformation after $10^{6}$ overwriting reached several tens of nm for lateral PCRAM while it was negligible for OUM. The thermo-mechanical simulation results confirmed the similar results on larger plastic deformation of lateral PCRAM than that of OUM during overwriting. As plastic deformation involves of atomic bonds breaking and reforming in phase change material, the plastic deformation may be one main reason for the failure of lateral PCRAM.
- 2009-04-25
著者
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Zhao Rong
Data Storage Institute
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Chong Tow
Data Storage Institute
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LI Jianming
Data Storage Institute
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Shi Luping
Data Storage Institute
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Lim Kian
Data Storage Institute Dsi Building
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Chong Tow
Data Storage Institute, A \ding{73}STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608
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Lee Hock
Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608, Singapore
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Yang Hongxin
Data Storage Institute, A \ding{73}STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608
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Lee Hock
Data Storage Institute, A \ding{73}STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608
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Zhao Rong
Data Storage Institute, A \ding{73}STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608
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Lim Kian
Data Storage Institute, A \ding{73}STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608
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Li Jianming
Data Storage Institute, A \ding{73}STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608
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