Theoretical Analysis of Bound-to-Continuum State Infrared Absorption in GaAs/Al_xGa_<1-x>As Quantum Well Structures
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概要
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This paper presents the first detailed analysis of bound-to-continuum state infrared optical transitions in doped GaAs/Al_xGa_<1-x>As quantum well structures taking into account the energy-dependent intrasubband relaxation time. Effects of the quantum well structural parameters on the absorption coefficient are studied so as to provide a basic understanding of how optimal device performance can be achieved by the proper choice of parameters. Theoretical calculations show that absorption peak wavelength and bandwidth are strongly dependent on the well width and barrier height, in agreement with reported experimental results. Therefore, with variation in the structural parameters, the absorption bandwidth can be tuned over a large range.
- 社団法人応用物理学会の論文
- 1993-05-15
著者
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Chong T
Nus Singapore
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Chong T
National Univ. Singapore Singapore
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Chong Tow
Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore
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Chua Soo
Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore
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