The Development of a Highly Selective KI/I_2/H_2O/H_2SO_4 Etchant for the Selective Etching of Al_<0.3>Ga_<0.7>As over GaAs
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-06-01
著者
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LAU Wai
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore
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ZHAO Rong
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore
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Lau Wai
Centre For Optoelectronics Faculty Of Engineering National University Of Singapore
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Zhao Rong
Centre For Optoelectronics Faculty Of Engineering National University Of Singapore
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Lim Hui
Centre For Optoelectronics Faculty Of Engineering National University Of Singapore Philips Singapore
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Lau Wai
Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore
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Kek Soon
Centre For Optoelectronics Faculty Of Engineering National University Of Singapore Texas Instruments
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Aziz Wan
Centre For Optoelectronics Faculty Of Engineering National University Of Singapore
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Chor Eng
Centre For Optoelectronics Faculty Of Engineering National University Of Singapore
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HENG Chun
Centre for Optoelectronics, Faculty of Engineering, National University of Singapore
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Heng Chun
Centre For Optoelectronics Faculty Of Engineering National University Of Singapore
関連論文
- Application of Semiconducting Low Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates
- The Characterization of Traps in Semi-Insulating Gallium Arsenide Buffer Layers Grown at Low Temperature by Molecular Beam Epitaxy with an Improved Zero-Bias Thermally Stimurated Current Technique
- The Application of Semiconducting Low-Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates
- A Comparison of the Selective Etching Characteristics of Conventional and Low-Temperature-Grown GaAs over AlAs by Various Etching Solutions
- Evidence that N_2O is a Stronger Oxidizing Agent than O_2 for the Post-Deposition Annealing of Ta_2O_5 on Si Capacitors
- A Comparison of Defect States in Tantalum Pentoxide (Ta_2O_5) Films after Rapid Thermal Annealing in O_2 or N_2O by Zero-Bias Thermally Stimulated Current Spectroscopy
- Improved Crystalline Quality of Molecular Beam Epitaxy Grown GaAs-on-Si Epilayer through the Use of Low-Temperature GaAs Intermediate Layer
- Quantitative Detection of Oxygen Contamination Related Traps in Gallium Arsenide Epitaxial Layer Grown by Molecular Beam Epitaxy at Low Temperature
- The Development of a Highly Selective KI/I_2/H_2O/H_2SO_4 Etchant for the Selective Etching of Al_Ga_As over GaAs
- Heterojunction Bipolar Transistor with an Additional Minority Carrier Reflection Barrier in the Emitter
- The Superiority of N_2O Plasma Annealing over O_2 Plasma Annealing for Amorphous Tantalum Pentoxide (Ta_2O_5) Films
- The Identification and Suppression of Defects Responsible for Electrical Hysteresis in Metal-Nitride-Silicon Capacitors