Chu P | City Univ. Hong Kong Hong Kong Chn
スポンサーリンク
概要
関連著者
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Lau W
Lam Res. Corp. California Usa
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Lau Wai
Department Of Electrical Engineering National University Of Singapore
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Lau Wai
Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore
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CHU Paul
Department of Physics and Materials Science, City University of Hong Kong
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Chu P
City Univ. Hong Kong Hong Kong Chn
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Chu Paul
Department Of Physics And Materials Science City University Of Hong Kong
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Qian Peng
Department Of Electrical Engineering National University Of Singapore
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Sandler N
Lam Research Corporation Cvd Business Unit
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SANDLER Nathan
Lam Research Corporation, CVD Business Unit
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MCKINLEY Kevin
Lam Research Corporation, CVD Business Unit
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KHAW Kee
Department of Electrical Engineering, National University of Singapore
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SANDLER P.
Lam Research Corporation, CVD Division
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Khaw Kee
Department Of Electrical Engineering National University Of Singapore
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Mckinley Kevin
Lam Research Corporation Cvd Business Unit
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Tung Chih
Institute Of Microelectronics Department Of Failure Analysis And Reliability
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PERERA Merinnage
Department of Electrical Engineering, National University of Singapore
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BABU Premila
Department of Electrical Engineering, National University of Singapore
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OW Aik
Department of Electrical Engineering, National University of Singapore
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HAN Taejoon
Lam Research Corporation, CVD Business Unit
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SHENG Tan
Institute of Microelectronics, Department of Failure Analysis and Reliability
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Ow Aik
Department Of Electrical Engineering National University Of Singapore
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Sheng Tan
Institute Of Microelectronics Department Of Failure Analysis And Reliability
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Han Taejoon
Lam Research Corporation Cvd Business Unit
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Babu Premila
Department Of Electrical Engineering National University Of Singapore
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Perera Merinnage
Department Of Electrical Engineering National University Of Singapore
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Perea Merinnage
Department of Electrical Engineering, National University of Singapore
著作論文
- Evidence that N_2O is a Stronger Oxidizing Agent than O_2 for the Post-Deposition Annealing of Ta_2O_5 on Si Capacitors
- A Comparison of Defect States in Tantalum Pentoxide (Ta_2O_5) Films after Rapid Thermal Annealing in O_2 or N_2O by Zero-Bias Thermally Stimulated Current Spectroscopy
- The Superiority of N_2O Plasma Annealing over O_2 Plasma Annealing for Amorphous Tantalum Pentoxide (Ta_2O_5) Films