Investigation of Quasi-Breakdown Mechanism through Post-Quasi-Breakdown Thermal Annealing
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-05-15
著者
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Cho Byung
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Li Ming
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Li Ming
Silicon Nano Device Lab (sndl). Department Of Electrical And Computer Engineering. National Universi
-
Cho Byung
Silicon Nano Device Lab (sndl). Department Of Electrical And Computer Engineering. National Universi
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Loh Wei
Silicon Nano Device Lab (sndl). Department Of Electrical And Computer Engineering. National Universi
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- Investigation of Quasi-Breakdown Mechanism through Post-Quasi-Breakdown Thermal Annealing
- Top-Surface Aluminized and Nitrided Hafnium Oxide Using Synthesis of Thin AlN and HfO_2 Stacked Layer
- Dynamic Bias-Temperature Instability in Ultrathin SiO_2 and HfO_2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime
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- Dynamic Bias-Temperature Instability in Ultrathin SiO2 and HfO2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime
- Dependence of Chemical Composition Ratio on Electrical Properties of HfO2–Al2O3 Gate Dielectric