Top-Surface Aluminized and Nitrided Hafnium Oxide Using Synthesis of Thin AlN and HfO_2 Stacked Layer
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Cho Byung
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Park Chang
Silicon Nano Device Lab Dept. Of Electrical & Computer Engineering National University Of Singap
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Kwong Dim-lee
Department Of Electrical And Computer Engineering The University Of Texas
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Kwong Dim-lee
Department Of Ece The University Of Texas
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Tang Lei
Institute Of Microelectronics
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WANG Wiede
Institute of Materials Research Engineering
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Cho Byung
Silicon Nano Device Lab Dept. Of Electrical & Computer Engineering National University Of Singap
関連論文
- Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process
- Dependence of Chemical Composition Ratio on Electrical Properties of HfO_2-Al_2O_3 Gate Dielectric
- Investigation of Quasi-Breakdown Mechanism through Post-Quasi-Breakdown Thermal Annealing
- Top-Surface Aluminized and Nitrided Hafnium Oxide Using Synthesis of Thin AlN and HfO_2 Stacked Layer
- Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon
- Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2 Gate Dielectrics
- Dependence of Chemical Composition Ratio on Electrical Properties of HfO2–Al2O3 Gate Dielectric