Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2 Gate Dielectrics

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概要

• 論文の詳細を見る

• In this paper, we report the electrical characteristics of n- and p-metal oxide semiconductor field effect transistors (MOSFETs) fabricated using a high-quality ultrathin (equivalent oxide thickness ${\sim}11$ Å) chemical vapor deposition (CVD) HfO2 gate stack with a selfaligned dual poly-Si gate process. The CVD HfO2 gate stack exhibits excellent thermal stability with the poly-Si gate up to 1050°C, after 30 s annealing. Good output MOS characteristics with high drive current capability, excellent subthreshold swings, and good mobility are obtained from both n- and p-MOSFETs.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-12-15

著者

• Kwong Dim-lee

  Department Of Ece The University Of Texas

• Lee Sungjoo

  Silicon Nano Device Lab Department Of Electrical And Computer Engineering National University Of Sin

関連論文

• Dependence of Chemical Composition Ratio on Electrical Properties of HfO_2-Al_2O_3 Gate Dielectric
• Top-Surface Aluminized and Nitrided Hafnium Oxide Using Synthesis of Thin AlN and HfO_2 Stacked Layer
• Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2 Gate Dielectrics
• Reliability Characteristics of poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric
• Dependence of Chemical Composition Ratio on Electrical Properties of HfO2–Al2O3 Gate Dielectric

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