Germanium Out-Diffusion in HfO_2 and its Impact on Electrical Properties
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Bera L.
Institute Of Microelectronics
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ZHANG Qingchun
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National Universi
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WU Nan
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National Universi
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ZHU Chunxiang
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National Universi
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Wu Nan
Silicon Nano Device Lab Department Of Electrical And Computer Engineering National University Of Sin
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Wu Nan
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Zhu Chunxiang
Silicon Nano Device Lab Department Of Electrical And Computer Engineering National University Of Sin
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Zhu Chunxiang
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Zhang Qingchun
Silicon Nano Device Lab Department Of Electrical And Computer Engineering National University Of Sin
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- Germanium Out-Diffusion in HfO_2 and its Impact on Electrical Properties
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- Dependence of Chemical Composition Ratio on Electrical Properties of HfO_2-Al_2O_3 Gate Dielectric
- The Electrical and Material Properties of HfO_xN_y Dielectric on Germanium Substrate
- Study of Mobility in Strained Silicon and Germanium Ultra Thin Body MOSFETs
- Effects of Sulfur Passivation on Ge MOS Capacitors with High-k Gate Dielectric
- The Electrical and Material Properties of HfOxNy Dielectric on Germanium Substrate
- Dependence of Chemical Composition Ratio on Electrical Properties of HfO2–Al2O3 Gate Dielectric
- Formation and Thermal Stability of Nickel Germanide on Germanium Substrate