Mechanism of Semiconductor Opening Switch
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概要
- 論文の詳細を見る
In this paper we report the results of our recent study on the semiconductor opening switch. Physical processes, which underlie the operating principle of high-power opening switches based on the nanosecond interruption of super-dense reverse currents in semiconductor diodes (semiconductor opening switch effect), are simulated. The physical processes that occur in the semiconductor structure during the pumping and interruption of the currents are analyzed. The measurement results for the semiconductor opening switch are given and compared with the theoretical calculation results. These calculation results agree well with the measurement results.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-03-15
著者
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YANG Rong
Institute of Microelectronics
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Luo Jinsheng
Institute of Microelectronics Xi'an Jiaotong University, Xi'an 710049, P. R. China
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Tu Jing
Institute of Microelectronics Xi'an Jiaotong University, Xi'an 710049, P. R. China
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Tu Jing
Institute of Microelectronics Xi'an Jiaotong University, Xi'an 710049, P. R. China
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Yang Rong
Institute of Microelectronics Xi'an Jiaotong University, Xi'an 710049, P. R. China
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