Workfunction Adjustment Using Thin Metal Film (Ti, Pd) under FUSI Gate Electrode and Laser Annealing
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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CHI D.
Institute of Materials Research & Engineering
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Chi D.
Institute Of Materials Research And Engineering
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LEE P.
School of Materials Science and Engineering, Nanyang Technological University
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HUANG Y.
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological Univ
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PEY K.
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological Univ
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ONG K.
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological Univ
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GOH I.
Systems on Silicon Manufacturing Co. Pte. Ltd.
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Ong K.
Microelectronics Center School Of Electrical And Electronic Engineering Nanyang Technological Univer
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Lee P.
School Of Materials Science And Engineering Nanyang Technological University
関連論文
- Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process
- Material and Electrical Characterization of Nickel Germanide for p-channel Germanium Schottky Source/Drain Transistors
- Pt-germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain MOSFET Integrated with TaN/CVD-HfO_2/Ge Gate Stack
- Silicon Nanowire Schottky Barrier NMOS Transistors
- Tuning of Work Function of Er-germanide Metal Gates on High-K Dielectric
- Workfunction Adjustment Using Thin Metal Film (Ti, Pd) under FUSI Gate Electrode and Laser Annealing