Tuning of Work Function of Er-germanide Metal Gates on High-K Dielectric

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• CHI D.

  Institute of Materials Research & Engineering

• LIEW S.

  Institute of Materials Research and Engineering

• SENG D.

  Institute of Materials Research and Engineering

関連論文

• Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process
• Material and Electrical Characterization of Nickel Germanide for p-channel Germanium Schottky Source/Drain Transistors
• Pt-germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain MOSFET Integrated with TaN/CVD-HfO_2/Ge Gate Stack
• Silicon Nanowire Schottky Barrier NMOS Transistors
• Tuning of Work Function of Er-germanide Metal Gates on High-K Dielectric
• Workfunction Adjustment Using Thin Metal Film (Ti, Pd) under FUSI Gate Electrode and Laser Annealing

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