Probing carbon nanostructures growth mechanism using an in-situ UHVTEM
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-09-13
著者
関連論文
- A Novel Approach to fabricate High Ge content SiGe on Insulator from Amorphous SiGe deposited on SOI wafers
- A Novel Approach to Fabricate-120nm Thick Fully Relaxed Ge-on-Insulator
- Probing carbon nanostructures growth mechanism using an in-situ UHVTEM