Surface Nanostructure Optimization for GaAs Solar Cell Application
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概要
- 論文の詳細を見る
Numerical simulation of optical absorption characteristics of gallium arsenide (GaAs) thin-film solar cells by the three-dimensional finite element method is presented, with emphasis on optimizing geometric parameters for nanowire and nanocone structures to maximize the ultimate photocurrent under AM1.5G illumination. The nanostructure-based GaAs thin-film solar cells have demonstrated a much higher photocurrent than the planar thin films owing to their much suppressed reflection and high light trapping capability. The nanowire structure achieves its highest ultimate photocurrent of 29.43 mA/cm2 with a periodicity (P) of 300 nm and a wire diameter of 180 nm. In contrast, the nanocone array structure offers the best performance with an ultimate photocurrent of 32.14 mA/cm2. The results obtained in this work provide useful guidelines for the design of high-efficiency nanostructure-based GaAs solar cells.
- 2012-10-25
著者
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Wang Hao
School Of Chemical Engineering And Technol. China Univ. Of Mining And Technol.
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WANG Xincai
Singapore Institute of Manufacturing Technology (SIMTECH)
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Hong Lei
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
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Yu Hongyu
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
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Zheng Hongyu
Singapore Institute of Manufacturing Technology, ASTAR (Agency for Science, Technology and Research), 71 Nanyang Drive, Singapore 638075
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Wang Hao
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
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