Tight-Binding Band Structures of Nanographite Multiribbons
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概要
- 論文の詳細を見る
Electronic properties of AB-stacked nanographite ribbons depend on the edge structure, the ribbon width (Ny), and the ribbon number (Nz). All zigzag ribbons are metals, while armchair ribbons are metals only for Ny=3I+2 (I an integer). The dependence of energy gap on the ribbon number is weak for the semiconducting armchair multiribbons with Nz>5. The semiconductor-metal transition is absent in the increasing of Nz. Density of states exhibits many special structures. The interlayer interactions would affect the energy dispersions of band structures. They could induce the hybridization of energy bands, the new partial flat bands along the kx- or kz-direction, the asymmetry of the electronic structure about the Fermi level, the change from the direct energy gap into the indirect energy gap, the destruction of the state degeneracy, and the alternation of the special structures in the density of states.
- Physical Society of Japanの論文
- 2001-11-15
著者
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Lin Ming
Department Of Physics National Cheng Kung University
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CHEN R.
Department of Physics, National Cheng Kung University
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Wang Y.
Department Of Electrical Engineering National Cheng Kung University
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Shyu F.l.
Department Of Physics Chinese Military Academy Feng-shang Kaohsiung 830
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Shyu J.
Department Of Physics National Taiwan University
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Shyu J.
Department of Physics, Chinese Military Academy, Kaohsiung, Taiwan 830, R.O.C.
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Shyu F.
Department of Physics, Chinese Military Academy, Kaohsiung, Taiwan 830, R.O.C.
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Liao C.
Department of Electronics Eng., National Chiao Tung University, Nano Science Technology Center, University System of Taiwan, Hsinchu, Taiwan, R.O.C.
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Liao C.
Department of Physics, Chinese Military Academy, Kaohsiung, Taiwan 830, R.O.C.
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Chang C.P.
Department of Electrical Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan 842, R.O.C.
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Wang Y.
Department of Chemical Engineering, National Tsing Hua University
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