Optical Properties of InGaN/GaN Light Emitting Diodes Grown by Pulsed-Trimethylindium-Flow Process
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Wang S.
Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit
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Wang S.
Insititue Of Electro-optical Engineering Nation Ciao-tong University
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Lai W.
Institute Of Electro-optical Science & Engineering National Cheng Kung University
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WANG Y.
Department of Physics, Chinese Military Academy
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KUO H.
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University
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HSUEH T.
Center for Micro/Nano Science and Technology, National Cheng Kung University
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SHEU J.
Institute of Electro-Optical Science & Engineering, National Cheng Kung University
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Kuo H.
Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit
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Wang Y.
Department Of Electrical Engineering National Cheng Kung University
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Wang S.
Department Of Electrical Engineering National University Of Kaohsiung
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Wang S.
Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit
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Hsueh T.
Center For Micro/nano Science And Technology National Cheng Kung University
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Wang Y.
Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit
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Sheu J.
Institute Of Electro-optical Science & Engineering National Cheng Kung University
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Kuo H.
Department of Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hinchu, Taiwan 300, Republic of China
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Wang Y.
Department of Chemical Engineering, National Tsing Hua University
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