Temperature dependent photoluminescence of highly strained InGaAsN/GaAs Quantum Well (λ=1.28-1.45μm) with GaAsP strain-compensated layer
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Wang S.
Insititue Of Electro-optical Engineering Nation Ciao-tong University
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CHANG Y.
Insititue of Electro-Optical Engineering, Nation Ciao-Tong University
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KUO H.
Insititue of Electro-Optical Engineering, Nation Ciao-Tong University
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TSAI M.
Insititue of Electro-Optical Engineering, Nation Ciao-Tong University
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TANSU N.
Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh Universit
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YEH Jeng-Ya
Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Ma
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MAWST Luke
Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Ma
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Kuo H.
Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit
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Tansu N.
Center For Optical Technologies Department Of Electrical And Computer Engineering Lehigh University
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Mawst Luke
Reed Center For Photonics Department Of Electrical Computer Engineering University Of Wisconsin-madi
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Yeh Jeng-ya
Reed Center For Photonics Department Of Electrical Computer Engineering University Of Wisconsin-madi
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Wang S.
Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit
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Chang Y.
Insititue Of Electro-optical Engineering Nation Ciao-tong University
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Tsai M.
Insititue Of Electro-optical Engineering Nation Ciao-tong University
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- Temperature dependent photoluminescence of highly strained InGaAsN/GaAs Quantum Well (λ=1.28-1.45μm) with GaAsP strain-compensated layer
- Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells ($\lambda = 1.28--1.45$ μm) with GaAsP Strain-Compensated Layers