A Topographic and Magnetic Study of Sputtered Nickel Thin Films

概要

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Nickel thin films were deposited onto (100) silicon wafers using the sputtering technique. The thickness was varied between 45 to 500 nm. The nickel film formed in the initial stage (45 nm) was an uniform and continuous layer on the silicon substrate coated with a native silicon oxide layer. The film with a thickness of 78 nm exhibited high coercivity H_c (806 Oe) and high squareness in the perpendicular direction to the film plane, while H_c of 349 Oe was measured in the film plane. As the thickness increased, coercivity and magnetic anisotropy reduced and a plane anisotropy was finally exhibited in thick films (∼500 nm). TEM study showed that the films were mixtures of a columnar structure on the top and a uniform continuous structure on the bottom. All the films have shown a (111) texture and the grain size was estimated to be 15-20 nm.
社団法人電子情報通信学会の論文
1999-11-10