Characteristics of SrTiO3 Field-Effect Transistors with DyScO3 Gate Insulators

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概要

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• We have developed a top-gate type of field-effect transistor with a single-crystal SrTiO3 channel and a DyScO3 gate insulator stack consisting of an epitaxial interface layer and an amorphous breakdown barrier layer. We show that the zero-bias conductivity of the transistor channel is strongly affected by the presence of charged traps in the amorphous gate insulator. Low off-state current could only be achieved in devices that were fabricated at an oxygen ambient pressure of 10 mTorr. At lower pressures, metallic channel interfaces were obtained, even after post-annealing in air. When both epitaxial and amorphous DyScO3 films were grown at 10 mTorr of oxygen, the on/off ratio of the field-effect transistors (FETs) reached $10^{6}$. We argue that when designing oxide FETs, it is necessary to consider not only breakdown characteristics, but also the charged trap density in wide-gap oxide insulators.

• 2010-12-25

著者

• Abe Takuya

  Department Of Biology Science & Engineering Division University Of The Ryukyus

• LIPPMAA Mikk

  Institute for Solid State Physics, University of Tokyo

• Lippmaa Mikk

  Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

• Nishio Kazunori

  Department of Advanced Material Science, School of Frontier Sciences, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan

• Takahashi Ryota

  Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

• Abe Takuya

  Department of Advanced Material Science, School of Frontier Sciences, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan

• LIPPMAA Mikk

  Institute for Solid State Physics, The University of Tokyo

• Takahashi Ryota

  Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan

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