Growth and Characterization of Epitaxial DyScO3 Films on SrTiO3
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概要
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Epitaxial films of wide-gap insulators DyScO3 and CaHfO3 were grown on SrTiO3(100) substrates to test the suitability of these films for use as gate insulators in oxide-based field-effect devices. The surface morphologies and breakdown characteristics of epitaxial DyScO3 and CaHfO3 films were studied and correlated with film thickness. It was shown that due to a smaller lattice mismatch with the SrTiO3 substrate, DyScO3 films have lower surface roughness and higher breakdown fields than CaHfO3 films grown under the same conditions. The highest breakdown field of 8 MV/cm was obtained in 10-nm-thick DyScO3 films, which had atomically flat surfaces.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-08-25
著者
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Uozumi Takayuki
Institute For Solid State Physics The University Of Tokyo
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Shibuya Keisuke
Institute For Solid State Physics University Of Tokyo
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Ohnishi Tsuyoshi
Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Sato Taisuke
Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Shibuya Keisuke
Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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OHNISHI Tsuyoshi
Institute for Solid State Physics, The University of Tokyo
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LIPPMAA Mikk
Institute for Solid State Physics, The University of Tokyo
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Uozumi Takayuki
Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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